Effect of sputtering power on the physical properties of dc magnetron sputtered copper oxide thin films

被引：60

作者：

Reddy, A. Sivasankar ^{[1
,2
]}

Park, Hyung-Ho ^{[1
]}

Reddy, V. Sahadeva ^{[2
]}

Reddy, K. V. S. ^{[2
]}

Sarma, N. S. ^{[2
]}

Kaleemulla, S. ^{[2
]}

Uthanna, S. ^{[2
]}

Reddy, P. Sreedhara ^{[2
]}

机构：

[1] Yonsei Univ, Dept Ceram Engn, Seoul 120749, South Korea

[2] Sri Venkateswara Univ, Dept Phys, Tirupati 517502, Andhra Pradesh, India

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2008年 / 110卷 / 2-3期

基金：

新加坡国家研究基金会;

关键词：

sputtering; oxides; electrical properties; optical properties;

D O I：

10.1016/j.matchemphys.2008.02.031

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cuprous oxide films were deposited on glass substrates using dc magnetron sputtering technique by sputtering of pure copper target in a mixture of argon and oxygen atmosphere under various sputtering powers in the range 0.38-1.50 W cm(-2). The influence of sputtering power on the structural, electrical and optical properties was systematically studied. The films were polycrystalline in nature with cubic structure. The films formed at sputtering powers <= 0.76 W cm(-2) exhibited mixed phase of Cu2O and CuO while those formed at 1.08 W cm(-2) were single phase Cu2O. The single-phase Cu2O films formed at a sputtering power of 1.08 W cm(-2) showed electrical resistivity of 46 Omega cm, Hall mobility of 5.7 cm(2) V-1 s(-1) and optical band gap of 2.04 eV. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：397 / 401

页数：5

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