Physical properties of copper oxide thin films prepared by dc reactive magnetron sputtering under different oxygen partial pressures

被引：50
|
作者：
Chu, Chun-Lung [1 ]
Lu, Hsin-Chun [1 ,2 ]
Lo, Chen-Yang [1 ]
Lai, Chi-You [1 ]
Wang, Yu-Hsiang [1 ]
机构：
[1] Chang Gung Univ, Dept Chem & Mat Engn, Tao Yuan 333, Taiwan
[2] Chang Gung Univ, Green Technol Res Ctr, Tao Yuan 333, Taiwan
来源：
PHYSICA B-CONDENSED MATTER | 2009年 / 404卷 / 23-24期
关键词：
Cuprous oxide; Thin film; Sputtering; Oxygen partial pressure; XPS;
D O I：
10.1016/j.physb.2009.08.185
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Nano-structured copper oxide thin films were deposited on glass substrates by dc reactive magnetron sputtering. The structural, morphological, electrical, and optical properties of the deposited copper oxide thin films were found to change with oxygen partial pressure. Changes in oxygen partial pressure during sputter deposition led to variations in Cu, Cu+ and Cu+2 concentrations, which resulted in corresponding changes in the electronic characteristics of sputtered semiconducting copper oxide films from initially n- to p-type and then from p-type back to n-type. These phenomena demonstrate that p-type copper oxide thin films can only be deposited by dc reactive magnetron sputtering within a narrow oxygen partial pressure range. (C) 2009 Elsevier BM. All rights reserved.
引用
收藏
页码：4831 / 4834
页数：4
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