Thermal simulation of and characterization of AlGaN/GaN/Si high electron mobility transistors

被引：0

作者：

Hanreich, G ^{[1
]}

Bychikhin, S ^{[1
]}

Pogany, D ^{[1
]}

Marso, M ^{[1
]}

Kordos, P ^{[1
]}

Nicolics, J ^{[1
]}

机构：

[1] Univ Appl Sci, A-7423 Pinkafeld, Austria

来源：

2005 28TH INTERNATIONAL SPRING SEMINAR ON ELECTRONICS TECHNOLOGY | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We study the self-heating effect in a high-power AlGaN/GaN High Electron Mobility Transistor (HEMT) grown on silicon. We determine the HEMT static channel temperature using a dc characterization method and the results are compared with values calculated with a two-dimensional thermal model. No experimental data on the dynamic thermal behavior are available until now. For this reason, the transient thermal response on current pulses in the sub-microsecond range is estimated theoretically by means of a three-dimensional thermal model.

引用

页码：144 / 145

页数：2

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