DC method for self-heating estimation applied to FinFET

被引：0
|
作者：
Mori, C. A. B. [1 ]
Agopian, P. G. D. [1 ,2 ]
Martino, J. A. [1 ]
机构：
[1] Univ Sao Paulo, PSI, LSI, Sao Paulo, Brazil
[2] Sao Paulo State Univ, UNESP, Sao Joao Da Boa Vista, Brazil
来源：
2018 33RD SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO) | 2018年
基金：
巴西圣保罗研究基金会;
关键词：
Self-heating effect; FinFET; Semi conductor-On-Insulator;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reports an extension on the application of the DC method for the estimation of self-heating effects from planar to FinFET devices, verified through theoretical considerations and numerical simulations. In the worst case, a difference of 5.6% was observed on the estimation of the transistors channel temperature when compared to a traditional method.
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页数：4
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