InAlAs Avalanche Photodiodes for Gated Geiger Mode Single Photon Counting

被引：0

作者：

Nakata, T. ^{[1
]}

Mizuki, E. ^{[1
]}

Tsukuda, T. ^{[1
]}

Takahashi, S. ^{[2
]}

Hatakeyama, H. ^{[1
]}

Anan, T. ^{[1
]}

Makita, K. ^{[1
]}

Tomita, A. ^{[1
,3
]}

机构：

[1] NEC Corp Ltd, Opt Network Div, 1131 Hinode, Abiko, Chiba, Japan

[2] NEC Corp Ltd, Syst Platform Res Labs, Nakahara Ku, Kawasaki, Kanagawa, Japan

[3] JST, ERATO SORST, Tokyo, Japan

来源：

2010 15TH OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC) | 2010年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InAlAs-APDs were developed and characterized its detection performances for single photon counting. We succeed to improve the signal-to-noise ratio not only by the crystal quality but also by the multiplication layer design.

引用

页码：822 / +

页数：2

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