Γ-X mixing in GaAs-Ga1-xAlxAs quantum wells under hydrostatic pressure

被引：30
|
作者：
Mora-Ramos, M. E. [1 ]
Lopez, S. Y. [2 ]
Duque, C. A. [3 ,4 ]
机构：
[1] Univ Autonoma Estado Morelos, Fac Ciencias, Cuernavaca 62209, Morelos, Mexico
[2] Univ Antioquia, Fac Educ, Medellin 1226, Colombia
[3] Univ Antioquia, Inst Fis, Medellin 1226, Colombia
[4] Univ Estadual Campinas, Inst Fis, BR-13083970 Campinas, SP, Brazil
来源：
EUROPEAN PHYSICAL JOURNAL B | 2008年 / 62卷 / 03期
关键词：
D O I：
10.1140/epjb/e2008-00161-6
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The mixing between the Gamma and X conduction-band valleys in GaAs-Ga1-xAlxAs quantum wells is investigated by using a phenomenological model which takes into account the effects of applied hydrostatic pressure. The dependencies of the variationally calculated photoluminescence peak-energy transitions on the applied hydrostatic pressure and quantum-well width are presented. A systematic study of the Gamma-X mixing parameter is also reported. In particular, it is shown that the inclusion of the Gamma-X mixing explains the non-linear behavior in the photoluminescence peak of confined exciton states that has been experimentally observed for pressures above 15 kbar in GaAs-Ga1-xAlxAs quantum wells.
引用
收藏
页码：257 / 261
页数：5
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