Silicon Nitride/Silicon Dioxide Echelle Grating Spectrometer for Operation Near 1.55 μm

被引：8
|
作者：
Xie, Shengjie [1 ]
Meng, Yang [1 ]
Bland-Hawthorn, Joss [2 ,3 ]
Veilleux, Sylvain [4 ,5 ]
Dagenais, Mario [1 ]
机构：
[1] Univ Maryland, Dept Elect & Comp Engn, College Pk, MD 20742 USA
[2] Univ Sydney, Sch Phys, Sydney Inst Astron, Sydney, NSW 2006, Australia
[3] Univ Sydney, Sch Phys, Sydney Astrophoton Instrumentat Labs, Sydney, NSW 2006, Australia
[4] Univ Maryland, Dept Astron, College Pk, MD 20742 USA
[5] Univ Maryland, Joint Space Sci Inst, College Pk, MD 20742 USA
来源：
IEEE PHOTONICS JOURNAL | 2018年 / 10卷 / 06期
基金：
美国国家科学基金会;
关键词：
nanophotonics; spectroscopy; demultiplexing;
D O I：
10.1109/JPHOT.2018.2880182
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Here we use an electron beam lithography system to pattern an Si3N4/SiO2 echelle grating using silver as a reflector on the grating grooves. The grating in this letter achieves 1.39 dB on-chip loss, a spectral resolution of similar to 1300, a 1.2 dB channel nonuni-formity, and less than -30 dB adjacent channel crosstalk for the transverse electric field polarization. We establish that stitching errors can lead to appreciable adjacent channel crosstalk if proper precaution is not taken to minimize them.
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页数：7
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