Nanometer-Scale Patterning on PMMA Resist by Force Microscopy Lithography

被引：0

作者：

Hassani, Sadegh Sedigheh ^{[1
]}

Sobat, Zahra ^{[1
]}

Aghabozorg, Hamid Reza ^{[1
]}

机构：

[1] RIPI, Catalysis Res Ctr, Tehran, Iran

来源：

IRANIAN JOURNAL OF CHEMISTRY & CHEMICAL ENGINEERING-INTERNATIONAL ENGLISH EDITION | 2008年 / 27卷 / 04期

关键词：

Nano-lithography; Nano-patterning; Force lithography; Atomic force microscopy; Scanning probe lithography;

D O I：

暂无

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Nanoscale science and technology has today mainly focused on the fabrication of nano devices. In this paper, we study the use of lithography process to build the desired nanostructures directly. Nanolithography on polymethylmethacrylate (PMMA) surface is carried out by using Atomic Force Microscope (AFM) equipped with silicon tip, in contact mode. The analysis of the results shows that the depth of scratches increases with the increase of applied normal force. The scanning velocity is also shown to influence the AFM patterning process. As the scanning velocity increases, the scratch depth decreases. The influence of time and number of scratching cycles is also investigated.

引用

页码：29 / 34

页数：6

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