3D Integration Technologies for MEMS/IC Systems

被引：14
|
作者：
Ramm, Peter [1 ]
Klumpp, Armin [1 ]
Weber, Josef [1 ]
机构：
[1] Fraunhofer Inst Reliabil & Microintegrat, Munich Div, D-80606 Munich, Germany
来源：
PROCEEDINGS OF THE 2009 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2009年
关键词：
3D Integration; More than Moore; Through Silicon Via; TSV technology; heterogeneous systems; TPMS; e-CUBES; MEMS; 3D-IC; ICV-SLID;
D O I：
10.1109/BIPOL.2009.5314117
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
3D integration is a key solution to the predicted performance problems of future ICs as well as it offers extreme miniaturization and cost-effective fabrication of so-called More than Moore products as e.g. MEMS/IC systems. Through Silicon Via (TSV) technologies enable high interconnect performance at relatively high fabrication cost compared to 3D packaging. In general it is not only one 3D integration technology suitable for the fabrication of the large variety of 3D integrated systems. Moreover, even one single product may need several different technologies for a cost-effective fabrication. Wireless sensor systems (e.g. e-CUBES (R)) an excellent example for the need of a suitable mixture. Consisting of MEMS, ICs, memories, antennas and power modules they can only be fabricated in a cost-efficient way by application of specific optimized 3D technologies for the integration of the different sub-modules. The technology choice for an e-CUBES demonstrator is described.
引用
收藏
页码：138 / 141
页数：4
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