Diode-End-Pumped Tm:Ho:GdVO4 Microchip Laser at Room Temperature

被引：1
|
作者：
Yao Bao-Quan [1 ]
Chen Fang [1 ]
Wang Qiang [1 ]
Wu Chun-Ting [1 ]
Li Gang [1 ]
Zhang Chao-Hui [1 ]
Wang Yue-Zhu [1 ]
Ju You-Lun [1 ]
机构：
[1] Harbin Inst Technol, Natl Key Lab Tunable Laser Technol, Harbin 150001, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2011年 / 28卷 / 02期
关键词：
MU-M; TM;
D O I：
10.1088/0256-307X/28/2/024210
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Room-temperature Tm:Ho:GdVO4 microchip laser operated around 2 mu m is demonstrated for the first time to our knowledge. At a heat sink temperature of 283 K, maximum output power of 29.7mW is obtained by using a 0.25-mm-long crystal at an absorbed pump power of 912mW, corresponding to a slope efficiency of 5.0%. At the temperature to 283 K, a single-longitudinal-mode laser as much as 8mW at 2048.5nm is achieved. The M-2 factor is measured to be 1.4.
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页数：3
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