Statistical Method to Extract Radiation-Induced Multiple-Cell Upsets in SRAM-Based FPGAs

被引：8

作者：

Perez-Celis, Andres ^{[1
,2
]}

Wirthlin, Michael J. ^{[1
,2
]}

机构：

[1] Brigham Young Univ, Dept Elect & Comp Engn, Provo, UT 84602 USA

[2] NSF Ctr Space High Performance & Resilient Comp S, Gainesville, FL USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2020年 / 67卷 / 01期

基金：

美国国家科学基金会;

关键词：

Field-programmable gate arrays (FPGAs); multiple-bit upset (MBU); multiple-cell upset (MCU); radiation testing; single-event effects (SEEs); SINGLE-EVENT;

D O I：

10.1109/TNS.2019.2955006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Radiation-induced multiple-cell upsets (MCUs) are a concern because they can overcome the protection of error correction code and triplicated designs. Extracting MCU data from radiation tests is helpful to perform more accurate fault injection tests, where MCUs could be simulated with the injection of bits based on the MCUs shapes, sizes, and frequencies. This article presents a statistical method to extract MCU shapes and frequencies from components with no information regarding their physical layout. The proposed method can be used to extract MCU information from BRAM and CRAM alike. The results show the MCU data for three families of Xilinx field-programmable gate arrays (FPGAs).

引用

页码：50 / 56

页数：7

共 50 条

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