40 Gbit/s silicon optical modulator for high-speed applications

被引：258
|
作者：
Liao, L. [1 ]
Liu, A. [1 ]
Rubin, D. [2 ]
Basak, J. [1 ]
Chetrit, Y. [2 ]
Nguyen, H. [1 ]
Cohen, R. [2 ]
Izhaky, N. [2 ]
Paniccia, M. [1 ]
机构：
[1] Intel Corp, Santa Clara, CA 95054 USA
[2] Intel Corp, IL-91031 Jerusalem, Israel
来源：
ELECTRONICS LETTERS | 2009年
关键词：
Number:; 224312; Acronym:; FP7; Sponsor: Seventh Framework Programme;
D O I：
10.1049/el:20072253
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high-speed silicon optical modulator based on the free carrier plasma dispersion effect is presented. It is based oil carrier depiction of a pn diode embedded inside a silicon-on-insulator waveguide. To achieve high-speed performance, a travelling-wave design is used to allow co-propagation of the electrical and optical signals along the length of the device. The resulting modulator has a 3 dB bandwidth of similar to 30 GHz and can transmit data up to 40 Gbit/s.
引用
收藏
页码：51 / 52
页数：2
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