Elastic constants of epitaxial cubic MoNx (001) layers

被引:24
|
作者
Ozsdolay, B. D. [1 ]
Shen, X. [2 ]
Balasubramanian, K. [1 ]
Scannell, G. [1 ]
Huang, L. [1 ]
Yamaguchi, M. [2 ]
Gall, D. [1 ]
机构
[1] Rensselaer Polytech Inst, Dept Mat Sci & Engn, Troy, NY 12180 USA
[2] Rensselaer Polytech Inst, Dept Phys, Troy, NY 12180 USA
来源
SURFACE & COATINGS TECHNOLOGY | 2017年 / 325卷
基金
美国国家科学基金会;
关键词
Molybdenum nitride; Stiffness; Elastic constant; Brillouin scattering; C11; C44; MOLYBDENUM NITRIDE FILMS; PULSED-LASER DEPOSITION; MECHANICAL-PROPERTIES; THIN-FILMS; ELECTRONIC-PROPERTIES; CRYSTAL-STRUCTURE; LOW-ENERGY; BRILLOUIN-SCATTERING; PHYSICAL-PROPERTIES; THERMAL-STABILITY;
D O I
10.1016/j.surfcoat.2017.07.015
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The N-to-Mo ratio x in epitaxial cubic molybdenum nitride y-MoNx(001) layers was varied from x = 0.69-125 by adjusting the substrate temperature T-s = 1000-600 degrees C during reactive magnetron sputter deposition. X-ray diffraction, reflection, and reciprocal space mapping measurements in combination with Rutherford backscattering spectroscopy indicate that the layers exhibit negligible strain and that increasing x = 0.69-1.25 leads to an increasing lattice constant a = 4.16-426 angstrom and a decreasing density p = 8.7-6.8 g/cm(3) which is primarily attributed to a decrease in the cation site occupation from 0.89 to 0.70. Time resolved pump -probe reflectivity measurements of the sound velocity parallel to the [001] growth direction indicate that increasing the nitrogen concentration leads to a velocity reduction, corresponding to a decrease in C-11 from 502 +/- 31 to 355 +/- 30 GPa for x = 0.69-1.25. Similarly, the transverse surface acoustic wave velocity measured by surface Brillouin scattering spectroscopy decreases from 4.00-352 km/s, providing values for C-44 from 100 +/- 7 to 73 +/- 3 GPa. The softening with increasing N concentration is primarily attributed to the decreasing Mo site occupancy, which causes a reduction in the valence electron concentration leading to a weakening of N Mo bonds associated with hybridized N 2p - Mo 4d e(g) orbitals. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:572 / 578
页数:7
相关论文
共 50 条
  • [41] Magnetic anisotropy of epitaxial Fe layers grown on Si(001)
    Bertoncini, P
    Wetzel, P
    Berling, D
    Mehdaoui, A
    Loegel, B
    Gewinner, G
    Poinsot, R
    Pierron-Bohnes, V
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2001, 237 (02) : 191 - 205
  • [42] Growth and physical properties of epitaxial CeN layers on MgO(001)
    Lee, TY
    Gall, D
    Shin, CS
    Hellgren, N
    Petrov, I
    Greene, JE
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (02) : 921 - 927
  • [43] Magnetotransport and antiferromagnetic behavior in ErP epitaxial layers on GaInP(001)
    Nakamura, A.
    Ito, T.
    Ohnishi, H.
    Koizumi, A.
    Takeda, Y.
    PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 893 : 1235 - +
  • [44] Purity of epitaxial cubic BoronNitride films on (001) Diamond - A prerequisite for their doping
    Yin, H.
    Boyen, H. -G.
    Ziemann, P.
    Dohuard, B.
    Houssiau, L.
    Renaux, F.
    Hecq, M.
    Bittencourt, C.
    DIAMOND AND RELATED MATERIALS, 2008, 17 (03) : 276 - 282
  • [45] Resistivity Scaling in Epitaxial CuAl2(001) Layers
    Zhang, Minghua
    Gall, Daniel
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (09) : 5110 - 5115
  • [46] SURFACE PHONONS AND STRUCTURE OF EPITAXIAL NICKEL LAYERS ON CU(001)
    CHEN, Y
    TONG, SY
    KIM, JS
    MOHAMED, MH
    KESMODEL, LL
    PHYSICAL REVIEW B, 1991, 43 (08): : 6788 - 6791
  • [47] Growth and physical properties of epitaxial HfN layers on MgO(001)
    Seo, HS
    Lee, TY
    Wen, JG
    Petrov, I
    Greene, JE
    Gall, D
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (01) : 878 - 884
  • [48] Growth and physical properties of epitaxial HfN layers on MgO(001)
    Seo, H.-S., 1600, American Institute of Physics Inc. (96):
  • [49] Epitaxial growth of Fe on Fe/GaAs(001) reacted layers
    Lallaizon, C
    Lepine, B
    Ababou, S
    Schussler, A
    Quemerais, A
    Guivarc'h, A
    Jezequel, G
    Deputier, S
    Guerin, R
    APPLIED SURFACE SCIENCE, 1998, 123 : 319 - 323
  • [50] CRYSTALLOGRAPHIC DEFECTS IN (001) GAAS EPITAXIAL LAYERS GROWN BY MOCVD
    VANDEVEN, J
    WEYHER, JL
    IKINK, H
    GILING, LJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (04) : 989 - 997