Ion irradiation-induced amorphization in the Al2O3-SiO2 system: A comparison with glass formation

被引:16
|
作者
Wang, SX [1 ]
Wang, LM [1 ]
Ewing, RC [1 ]
Doremus, RH [1 ]
机构
[1] RENSSELAER POLYTECH INST,DEPT MAT ENGN,TROY,NY 12181
关键词
D O I
10.1063/1.364219
中图分类号
O59 [应用物理学];
学科分类号
摘要
The ion beam-induced crystalline-to-amorphous transition has been investigated for crystalline phases in the Al2O3-SiO2 system: Al2O3, SiO2 (quartz), Al2SiO5 (kyanite, andalusile, sillimanite), and 3Al(2)O(3) . 2SiO(2) (mullite). Xe+ 1.5 MeV was used to irradiate samples at temperatures from 15 to 1023 K in situ in a transmission electron microscope to determine the critical amorphization doses. The susceptibility to amorphization is (highest to lowest): quartz, sillimanite, kyanite, andalusite, mullite, and alumina. These data are compared to viscosities and activation energies for viscous flow of melts in this system. The doses required for amorphization by ion irradiation are related to the viscosities of the melts. The activation energies for irradiation-enhanced annealing are qualitatively correlated with the activation energies of viscous flow. These results suggest a parallel between ion beam irradiation-induced amorphization and glass formation. Glass-forming ''ability'' correlates with susceptibility to radiation-induced amorphization. (C) 1997 American Institute of Physics.
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页码:587 / 593
页数:7
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