Light emitting diodes based on sidewall m-plane epitaxy of etched GaN/sapphire templates

被引：3
|
作者：
Nepal, N. [1 ,3 ]
Frajtag, P. [2 ]
Zavada, J. M. [1 ]
El-Masry, N. A. [2 ]
Bedair, S. M. [1 ]
机构：
[1] North Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA
[2] North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA
[3] Naval Res Lab, Washington, DC USA
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 | 2011年 / 8卷 / 7-8期
关键词：
GaN; sidewall epitaxy; semi-polar plane; sidewall LEDs; QUANTUM-WELLS; ELECTROLUMINESCENCE; FIELDS; GREEN;
D O I：
10.1002/pssc.201000983
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Light emitting diodes (LEDs) were grown on the etched m-plane of c-plane GaN/sapphire templates by metal organic chemical vapor deposition (MOCVD). The LEDs, with InxGa1-xN/GaN quantum wells (QWs), were studied and current-voltage measurements show p-n diode behavior. TEM image analysis established that the QWs are on the {1 (1) over bar 01} sidewall semi-polar plane. Electroluminescence measurements on the fabricated LEDs display an emission peak at 487 nm, with a blue shift of only 4 nm on increasing injected current density from 0.3 to 100 A/cm(2). The demonstrated sidewall approach significantly reduces the quantum confined Stark Effect found in QWs grown on c-plane substrates. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：2354 / 2356
页数：3
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