Anomalous hot-carrier induced degradation in very narrow channel nMOSFETs with STI structure

被引：30
|
作者：
Nishigohri, M
Ishimaru, K
Takahashi, M
Unno, Y
Okayama, Y
Matsuoka, F
Kinugawa, M
机构：
来源：
IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996 | 1996年
关键词：
D O I：
10.1109/IEDM.1996.554120
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Channel width dependence of hot-carrier induced drain current degradation was investigated for nMOSFETs with optimized STI structure in which no MOS hump characteristics were observed. In an STI structure, increase in hot-carrier induced degradation in the narrow channel region was found for the first time. The stress time dependence of the drain current degradation rate increases drastically below 0.5 mu m channel width. This phenomenon is caused by accelerated hot-carrier generation and higher hot-electron injection rate at the channel region adjacent to the STI edge. The lifetime of nMOSFETs with STI structure would be seriously degraded by this phenomenon.
引用
收藏
页码：881 / 884
页数：4
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