Physical properties of reactive sputtered tin-nitride thin films

被引：74
|
作者：
Inoue, Y [1 ]
Nomiya, N [1 ]
Takai, O [1 ]
机构：
[1] Nagoya Univ, Dept Mat Proc Engn, Chikusa Ku, Nagoya, Aichi 46401, Japan
来源：
VACUUM | 1998年 / 51卷 / 04期
关键词：
D O I：
10.1016/S0042-207X(98)00271-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report on the physical properties of tin-nitride thin films deposited onto glass substrates by rf reactive sputtering. The crystal structure of the tin-nitride films is hexagonal and the lattice parameters are calculated from X-ray diffraction patterns as a = 0.369 nm and c = 0.529 nm. X-ray photoelectron spectroscopy reveals the bonding states af the polycrystalline tin-nitride films. Photoelectron lines and Auger lines are discussed in detail. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：673 / 676
页数：4
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