Towards unstrained interband cascade lasers

被引：6

作者：

Ryczko, Krzysztof ^{[1
]}

Sek, Grzegorz ^{[1
]}

机构：

[1] Wroclaw Univ Sci & Technol, Fac Fundamental Problems Technol, Dept Expt Phys, Lab Opt Spect Nanostruct, Wybrzeze Wyspianskiego 27, PL-50370 Wroclaw, Poland

来源：

APPLIED PHYSICS EXPRESS | 2018年 / 11卷 / 01期

基金：

欧盟地平线“2020”;

关键词：

MU-M; SENSOR;

D O I：

10.7567/APEX.11.012703

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose designs for the active region of an interband cascade laser by utilizing a combination of In(As,Sb) and (Ga,In)(As,Sb) materials in a type-II system for strain control and to eventually make the entire quantum well lattice-matched to GaSb or InAs substrates. Our k . p modelling results revealed that the tuning ranges for the oscillator strength of the optical transitions and the emission wavelength are beyond what is accessible with the commonly used strained system of InAs/GaInSb. Such a solution, combined with modifications in the passive device sections, can lead to the design and fabrication of a new class of fully unstrained devices operating in the mid-infrared range. (C) 2018 The Japan Society of Applied Physics

引用

页数：3

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