Transient characteristics of reversely switched dynistors in the submicrosecond pulse range

被引：6
|
作者：
Gorbatyuk, A. V. [1 ]
Ivanov, B. V.
Panaiotti, I. E.
Serkov, F. B.
机构：
[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2012年 / 38卷 / 04期
基金：
俄罗斯基础研究基金会;
关键词：
Current Pulse; Technical Physic Letter; Transient Characteristic; Piece Wise Linear Function; Saturated Core;
D O I：
10.1134/S1063785012040220
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Transient injection processes in reversely switched dynistors (RSDs) operating in a submicrosecond pulse range have been numerically simulated and the output current and voltage characteristics have been calculated. It is shown that, provided a proper choice of parameters of the silicon device structure and external chains, RSDs can be used to switch current pulses with amplitudes up to several dozen kA/cm(2), total durations of several hundred nanoseconds, and leading edge widths within 50-100 ns. The voltage decreases from the initial level by an order of magnitude already in 15-20 ns, and attains a steady value of 10-25 V during the leading edge time.
引用
收藏
页码：392 / 395
页数：4
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