Poly-Si thin film by ICP-CVD and ELA at 150 °C for flexible substrates

被引：0

作者：

Han, Sang-Myeon ^{[1
]}

Lee, Min-Cheol ^{[1
]}

Kang, Su-Hyuk ^{[1
]}

You, Bong-Hyun ^{[1
]}

Han, Min-Koo ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea

来源：

PHYSICA SCRIPTA | 2004年 / T114卷

关键词：

D O I：

10.1088/0031-8949/2004/T114/033

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

An ultra-low temperature (150 degrees C) polycrystalline silicon (poly-Si) film was successfully deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) and excimer laser annealing (ELA). The precursor active layer was deposited at a temperature of 150 degrees C by ICP-CVD using an SiH4/He mixture. The deposited silicon film consisted of a crystalline Si component as well as a hydrogenated amorphous Si component. The hydrogen content in the precursor layer was less than 5 at.%. After excimer laser irradiation, the grain size of the polysilicon film was in the range 300 similar to 500 nm. Various characteristics and qualities of the poly-silicon film were verified.

引用

页码：130 / 132

页数：3

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