Poly-Si thin film by ICP-CVD and ELA at 150 °C for flexible substrates

被引：0
|
作者：
Han, Sang-Myeon [1 ]
Lee, Min-Cheol [1 ]
Kang, Su-Hyuk [1 ]
You, Bong-Hyun [1 ]
Han, Min-Koo [1 ]
机构：
[1] Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea
来源：
PHYSICA SCRIPTA | 2004年 / T114卷
关键词：
D O I：
10.1088/0031-8949/2004/T114/033
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
An ultra-low temperature (150 degrees C) polycrystalline silicon (poly-Si) film was successfully deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) and excimer laser annealing (ELA). The precursor active layer was deposited at a temperature of 150 degrees C by ICP-CVD using an SiH4/He mixture. The deposited silicon film consisted of a crystalline Si component as well as a hydrogenated amorphous Si component. The hydrogen content in the precursor layer was less than 5 at.%. After excimer laser irradiation, the grain size of the polysilicon film was in the range 300 similar to 500 nm. Various characteristics and qualities of the poly-silicon film were verified.
引用
收藏
页码：130 / 132
页数：3
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