Relaxation kinetics of excitons in semiconductor nanostructures

被引：0

作者：

Runge, E ^{[1
]}

Zimmermann, R ^{[1
]}

机构：

[1] Humboldt Univ, Inst Phys, D-10117 Berlin, Germany

来源：

PROCEEDINGS OF THE THIRD INTERNATIONAL CONFERENCE ON EXCITONIC PROCESSES IN CONDENSED MATTER - EXCON '98 | 1998年 / 98卷 / 25期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Results are discussed for exciton relaxation in disordered quantum wells. They are based on a kinetic equation for the occupation of the quantum, mechanical eigenstates. Special attention is given to the possible presence of quantum mechanical level repulsion in local spectra and in the low-temperature phonon transition rates which combine matrix element effects and level statistics.

引用

页码：268 / 270

页数：3

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