TCAD for logic technology process development

被引：1
|
作者：
Cea, S. [1 ]
Berrada, S. [1 ]
Ghosh, K. [1 ]
Hasan, S. [1 ]
Keys, P. [1 ]
Mehandru, R. [1 ]
Obradovic, B. [1 ]
Tiwari, V [1 ]
Weber, C. [1 ]
Stettler, M. [1 ]
机构：
[1] Intel Corp, Log Technol Div, Hillsboro, OR 97124 USA
来源：
2021 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2021) | 2021年
关键词：
Process modeling; device modeling; stress; NEGF; metal modeling;
D O I：
10.1109/SISPAD54002.2021.9592551
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Process and device simulation has been invaluable for logic technology development for many technology nodes. The main goal of this work will be to review the broad and diverse simulation hierarchy that is used in industry to understand and optimize both current and future device technology options. This hierarchy spans both continuum modeling and atomistic methods / beyond continuum tools. Current process and device simulation results will be presented along possible extensions to the hierarchy to improve TCAD's ability to help technology development.
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收藏
页码：1 / 4
页数：4
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