Quantitative analysis of electronic transport through weakly coupled metal/organic interfaces

被引：13

作者：

Molinari, A. S. ^{[1
]}

Lezama, I. Gutierrez ^{[1
]}

Parisse, P. ^{[1
,2
,3
]}

Takenobu, T. ^{[4
,5
]}

Iwasa, Y. ^{[4
,5
]}

Morpurgo, A. F. ^{[1
]}

机构：

[1] Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands

[2] Univ Aquila, CASTI CNR INFM Reg Lab, I-67010 Laquila, Italy

[3] Univ Aquila, Dipartimento Fis, I-67010 Laquila, Italy

[4] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[5] Japan Sci & Technol Corp, CREST, Kawaguchi, Saitama 3300012, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 13期

关键词：

D O I：

10.1063/1.2904629

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using single-crystal transistors, we have performed a systematic experimental study of electronic transport through oxidized copper/rubrene interfaces as a function of temperature and bias. We find that the measurements can be quantitatively reproduced in terms of the thermionic emission theory for Schottky diodes, if the effect of the bias-induced barrier lowering is included. Our analysis emphasizes the role of the coupling between metal and molecules, which in our devices is weak due to the presence of an oxide layer at the surface of the copper electrodes. (C) 2008 American Institute of Physics.

引用

页数：3

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