Enhancement of electron mobility by an intense high-frequency irradiation in GaAs-based two-dimensional systems

被引：6
|
作者：
Chen, YQ [1 ]
Lei, XL [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 1999年 / 16卷 / 02期
关键词：
D O I：
10.1088/0256-307X/16/2/021
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A theoretical examination of the electron transport in GaAs-based quantum wells was carried out under the influence of an intense electromagnetic irradiation in the frequency range from 0.1 to 1 THz, based on the time-dependent, nonlinear steady-state response to the applied electric field. It is found that although at low temperature (T = 10 K) the de mobility of the systems is suppressed by the intense radiation field, in agreement with the available experimental observation, the effect can be reversed at elevated temperature. At T = 77 and 300 K, the de mobility of the GaAs system turns out to be enhanced with the increasing strength of the ac field when its amplitude is large than a threshold value.
引用
收藏
页码：134 / 136
页数：3
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