Optoelectronic properties and ion diffusion mechanism in 2D perovskites Cs3BX5 (B = Ge, Sn, and Pb; X = Cl, Br, and I): A first-principles investigation

被引:1
|
作者
Lan, Chunfeng [1 ]
Yang, Shijie [2 ]
Wang, Yongfei [2 ]
Zhao, Shuai [3 ]
机构
[1] BYD Inst Appl Technol, Sch Automot & Transportat Engn, Shenzhen Polytech, Shenzhen 518055, Peoples R China
[2] Univ Sci & Technol Liaoning, Sch Mat & Met, Anshan 114051, Liaoning, Peoples R China
[3] Chongqing Univ Technol, Sch Sci, Chongqing 400054, Peoples R China
关键词
Layered perovskites; Electronic structures; Ion migrations; HALIDE DOUBLE PEROVSKITES; TRIHALIDE PEROVSKITE; MIGRATION; HYSTERESIS; POINTS;
D O I
10.1016/j.cplett.2022.140049
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Mitigating ion migration is a big challenge for optoelectronic perovskite materials. In this work, we investigate a novel family of layered halide perovskites Cs3BX5 (B = Ge, Sn, and Pb; X = Cl, Br, and I) by first-principles calculations. These compounds exhibit direct bandgap and small effective masses of electrons and holes. The optical absorption and spectroscopic limited maximum efficiency suggest the promising potential for these materials in solar energy conversion. The suppressed ionic conductivity has also been demonstrated by the higher energy barriers of halide ions migrations, which would be conducive to mitigate the hysteresis in perovskite solar cells.
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页数:6
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