Influence of pulsed laser annealing on the properties of Ge quantum dots in Si matrix

被引：0
|
作者：
Gatskevich, E. I. [1 ]
Ivlev, G. D. [1 ]
Volodin, V. A. [2 ]
Dvurechenskii, A. V. [2 ]
Efremov, M. D. [2 ]
Nikiforov, A. I. [2 ]
Yakimov, A. I. [2 ]
机构：
[1] NAS Belarus, Inst Phys, 68 Independence Av, Minsk 220072, BELARUS
[2] Inst Semicond Phys SB RAS, Novosibirsk 630090, Russia
来源：
HIGH-POWER LASER ABLATION VII, PTS 1-2 | 2008年 / 7005卷
关键词：
radiation; pulse; reflectivity; quantum dots; nanocluster; Ge; Si; NANOSTRUCTURES;
D O I：
10.1117/12.782601
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The laser annealing of Ge/Si heterostructures with Ge quantum dots (QD's) embedded on the depth of 0.15 and 0.3 mu m has been studied. The samples were irradiated by 80-nanosecond ruby laser pulses. Irradiation energy density was close to the melting threshold of Si surface. The nanocluster structure was analyzed by Raman spectroscopy. Changes in composition of QD's were observed for both types of samples. The decrease in dispersion of nanocluster sizes after laser irradiation was obtained for samples with QD's embedded on 0.3 pin depth. The numerical simulations on the basis of Stefan problem showed that the maximum temperatures on the depth of QD's bedding differ by similar to 100 K. This difference is likely to lead to different effects of laser annealing of heterostructures with QD's.
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页数：4
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