The organic light-emitting field-effect transistor

Organic light-emitting field-effect transistors have become an interesting field of research for the investigation of ambipolar devices, enabling a deeper insight into ambipolar field-effect transistors and the potential realization of new devices. In this article, the progress of research on an organic light-emitting field-effect transistor based on the organic semiconductor poly(9,9-di-n-octyl-fluorene-alt-benzothiadiazole) (F8BT) and poly(methyl methacrylate) (PMMA) as gate dielectric is shown. The experimental results are compared to an analytical model for ambipolar field-effect transistors. The influence of injection barriers is numerically evaluated by the extension of the analytical model by constant contact resistors.