Characterisation of reactively sputtered silicon oxide for thin-film transistor fabrication

被引：11
|
作者：
Jun, SI [1 ]
McKnight, TE
Melechko, AV
Simpson, ML
Rack, PD
机构：
[1] Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA
[2] Oak Ridge Natl Lab, Mol Scale Engn & Nanoscale Technol Res Grp, Oak Ridge, TN 37831 USA
来源：
ELECTRONICS LETTERS | 2005年 / 41卷 / 14期
关键词：
D O I：
10.1049/el:20051045
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
To overcome deficiencies of sputtered silicon dioxide (SiO2) films the RF magnetron sputtering process was optimised using a full factorial design of experiment. The optimised SiO2 film has a 5.7 MV/cm breakdown field and a 6.2 nm/min deposition rate at 10 W/cm(2) RF power, 3 mtorr pressure, 300 degrees C substrate temperature, and 56 V substrate bias. Thin-film transistors were also fabricated and characterised to show potential and prospective applications of the optimised SiO2 films.
引用
收藏
页码：822 / 823
页数：2
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