Electroluminescent study of the efficiency of silicon heterostructural solar cells

被引：3

作者：

Verbitskii, V. N. ^{[1
]}

Panaiotti, I. E. ^{[1
]}

Nikitin, S. E. ^{[1
]}

Bobyl', A. V. ^{[1
]}

Shelopin, G. G. ^{[2
]}

Andronikov, D. A. ^{[2
]}

Abramov, A. S. ^{[2
]}

Sachenko, A. V. ^{[1
]}

Terukov, E. I. ^{[1
,2
]}

机构：

[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Russian Acad Sci, Ioffe Phys Tech Inst, R&D Ctr Thin Film Technol Energet, St Petersburg 194064, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2017年 / 43卷 / 09期

基金：

俄罗斯基础研究基金会;

关键词：

CRYSTALLINE SILICON;

D O I：

10.1134/S1063785017090115

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A strong (by more than an order of magnitude) change in the electroluminescence intensity is observed for the first time in high-quality heterojunction solar cells that are based on a single-crystal silicon and have an efficiency of 18 to 20.5%. This effect occurs due to the sharp change in the concentration of the recombination centers on the surface of single-crystal silicon wafers in the course of their pyramidal texturing and also due to the rise in the series resistance. The effect can be used for a quantitative highly sensitive characterization of the texturing, which is a fundamentally important stage in fabricating highly efficient silicon solar cells.

引用

页码：779 / 782

页数：4

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