Electroluminescent study of the efficiency of silicon heterostructural solar cells

被引:3
|
作者
Verbitskii, V. N. [1 ]
Panaiotti, I. E. [1 ]
Nikitin, S. E. [1 ]
Bobyl', A. V. [1 ]
Shelopin, G. G. [2 ]
Andronikov, D. A. [2 ]
Abramov, A. S. [2 ]
Sachenko, A. V. [1 ]
Terukov, E. I. [1 ,2 ]
机构
[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[2] Russian Acad Sci, Ioffe Phys Tech Inst, R&D Ctr Thin Film Technol Energet, St Petersburg 194064, Russia
基金
俄罗斯基础研究基金会;
关键词
CRYSTALLINE SILICON;
D O I
10.1134/S1063785017090115
中图分类号
O59 [应用物理学];
学科分类号
摘要
A strong (by more than an order of magnitude) change in the electroluminescence intensity is observed for the first time in high-quality heterojunction solar cells that are based on a single-crystal silicon and have an efficiency of 18 to 20.5%. This effect occurs due to the sharp change in the concentration of the recombination centers on the surface of single-crystal silicon wafers in the course of their pyramidal texturing and also due to the rise in the series resistance. The effect can be used for a quantitative highly sensitive characterization of the texturing, which is a fundamentally important stage in fabricating highly efficient silicon solar cells.
引用
收藏
页码:779 / 782
页数:4
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