Optical properties of type-II InGaN/GaAsN/GaN quantum wells

被引：26

作者：

Park, Seoung-Hwan ^{[1
]}

Lee, Yong-Tak ^{[2
]}

Park, Jongwoon ^{[3
]}

机构：

[1] Catholic Univ Daegu, Dept Elect Engn, Kyeongsan 712702, Kyeongbuk, South Korea

[2] Gwangju Inst Sci & Technol, Dept Informat & Commun, Kwangju 500712, South Korea

[3] Korea Inst Ind Technol, Gwangju Res Ctr, Energy & Appl Opt Team, Kwangju 500480, South Korea

来源：

OPTICAL AND QUANTUM ELECTRONICS | 2009年 / 41卷 / 11-13期

关键词：

InGaN; GaAsN; GaN; Quantum wells; Type-II; Light-emitting diode; STRAINED WURTZITE SEMICONDUCTORS; LASERS; GAIN; HETEROSTRUCTURES; ALLOYS;

D O I：

10.1007/s11082-010-9391-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optical properties of type-II InGaN/GaNAs QW light-emitting diodes are investigated by using the multiband effective mass theory. These results are compared with those of conventional InGaN/GaN QW structures. The type-II InGaN/GaNAs/GaN QW structure shows much larger spontaneous emission and optical gain than that of a conventional QW structure. This can be explained by the fact that, in the case of the type-II QW structure, the effective well width is greatly reduced. A type-II QW structure shows that the peak position at a high carrier density is similar to that (530 nm) at a low carrier density. On the other hand, in the case of a conventional QW structure, the peak position is largely blueshifted at a high carrier density.

引用

页码：779 / 785

页数：7

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