High-power optically pumped VECSEL using a double-well resonant periodic gain structure

被引：20

作者：

Fan, L ^{[1
]}

Hader, J

Schillgalies, M

Fallahi, M

Zakharian, AR

Moloney, JV

Bedford, R

Murray, JT

Koch, SW

Stolz, W

机构：

[1] Univ Arizona, Ctr Opt Sci, Tucson, AZ 85721 USA

[2] Univ Arizona, Ctr Math Sci, Tucson, AZ 85721 USA

[3] USAF, Res Lab, Wright Patterson AFB, OH 45433 USA

[4] Arete Assoc, Tucson, AZ 85751 USA

[5] Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany

[6] Univ Marburg, Dept Phys, D-35032 Marburg, Germany

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2005年 / 17卷 / 09期

关键词：

double-quantum-well; high-power laser; InGaAs; optical pumping; resonant periodic gain (RPG); semiconductor laser; vertical-external-cavity surface emitting laser (VECSEL);

D O I：

10.1109/LPT.2005.853536

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the design and fabrication of an optically pumped vertical-external-cavity surface-emitting lasers with double-well resonant periodic gain structure. Each double-well consists of two 4-nm-thick InGaAs strained quantum wells. The double-well provides optimum overlap between the quantum wells and the antinodes of the standing wave of laser signal at high-power and high-temperature, operation. The structure is more tolerant to variation of the growth, processing, and operating temperature for maintaining high modal gain. For a 230-mu m diameter pump spot, over 4-W continuous-wave output with a slope efficiency of 39% is demonstrated at 30 degrees C without thermal rollover.

引用

页码：1764 / 1766

页数：3

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