Fabrication of CdS/CdTe solar cells with transparent p-type conductive BaCuSeF back contact

被引：9

作者：

Yamamoto, Koichi ^{[1
]}

Sakakima, Hiroshi ^{[1
]}

Ogawa, Yohei ^{[2
]}

Hosono, Aikyo ^{[2
]}

Okamoto, Tamotsu ^{[2
]}

Wada, Takahiro ^{[1
]}

机构：

[1] Ryukoku Univ, Dept Mat Chem, Otsu, Shiga 5202194, Japan

[2] Kisarazu Natl Coll Technol, Kisarazu, Chiba 2920041, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2015年 / 54卷 / 08期

关键词：

THIN-FILMS; ELECTRICAL-CONDUCTION; GROWTH; SRCU2O2; OXIDE;

D O I：

10.7567/JJAP.54.08KC01

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

BaCuSeF films were applied to CdS/CdTe solar cells as back electrodes. The interfaces between the CdTe and BaCuSeF layers in the CdS/CdTe solar cells with BaCuSeF back contact deposited at substrate temperatures (TS) of 200 and 300 degrees C were analyzed by transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS). We clearly observed many dislocations in the CdTe layer in the CdS/CdTe solar cell with the BaCuSeF layer deposited at T-S = 300 degrees C. We also observed a reaction layer of Cu2.72Te2 between the BaCuSeF and CdTe layers in both solar cells. We concluded that (1) the substrate temperature for the pulsed laser deposition of the BaCuSeF layer and (2) the interface between the CdTe and BaCuSeF layers are important factors for the performance of the CdTe solar cells. We obtained high conversion efficiency of 8.31% for a solar cell with a BaCuSeF layer deposited at T-S = 200 degrees C on a CdTe surface etched in a NH3 aqueous solution. The highest conversion efficiency of 9.91% was obtained for a solar cell with a CdTe surface etched in a bromide-bromate solution. (C) 2015 The Japan Society of Applied Physics

引用

页数：4

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