Design of high voltage 4H-SiC superjunction Schottky rectifiers

被引：0
|
作者：
Zhu, L [1 ]
Losee, P [1 ]
Chow, TP [1 ]
机构：
[1] Rensselaer Polytech Inst, Ctr Integrated Elect, Troy, NY 12180 USA
来源：
HIGH PERFORMANCE DEVICES, PROCEEDINGS | 2005年
关键词：
D O I：
10.1142/9789812702036_0039
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a novel Schottky rectifier structure based on the superjunction approach, which is utilizes 2- and 3-D field shaping to increase the avalanche breakdown voltage. Device forward and blocking characteristics are analyzed with numerical simulations and compared with conventional 4H-SiC Schottky rectifiers. Optimal design tradeoffs between breakdown voltage and specific on resistance are obtained for high voltage 4H-SiC supejunction Schottky rectifiers. The results show that the new structure can provide a 20 x lower R-on,R-sp than conventional Schottky rectifier for 6kV device. In addition, device termination and possible fabrication steps for the superjunction devices are also presented.
引用
收藏
页码：241 / 247
页数：7
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