Oxidized bridges technology for suspended MEMS fabrication using standard silicon wafer

被引：1
|
作者：
Postnikov, A. [1 ]
Morozov, O. V. [1 ]
Amirov, I. I. [1 ]
机构：
[1] Russian Acad Sci, Phys Technol Inst, Yaroslavl Branch, Yaroslavl, Russia
来源：
MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS | 2015年 / 21卷 / 03期
关键词：
TRENCH;
D O I：
10.1007/s00542-014-2080-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a new method for electrically isolating released single crystal silicon MEMS structures. The technology employees double-side processing deep reactive ion etching to obtain functional high aspect ratio micromechanical structures and deep silicon oxidizing to isolate them from bulk silicon. Applicability of the technology to MEMS design was demonstrated with fabrication of the monolithic integrated bulk micromachined comb drive.
引用
收藏
页码：669 / 674
页数：6
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