Formation of shallow source/drain extensions for metal-oxide-semiconductor field-effect-transistors by antimony implantation

被引：8

作者：

Rücker, H ^{[1
]}

Heinemann, B ^{[1
]}

Barth, R ^{[1
]}

Bolze, D ^{[1
]}

Melnik, V ^{[1
]}

Krüger, D ^{[1
]}

Kurps, R ^{[1
]}

机构：

[1] IHP, D-15236 Frankfurt, Germany

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 05期

关键词：

D O I：

10.1063/1.1542932

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Shallow Sb and As junctions have been investigated with regard to their applicability in complementary metal-oxide-semiconductor (CMOS) technologies. Replacing As source/drain extensions by Sb with the same implanted depth facilitates the formation of about 20 nm shallower junctions and even lower sheet resistance. This is due to the absence of transient enhanced diffusion effects and less dose loss for Sb. Sb source/drain extensions with a final junction depth of 40 nm and a sheet resistance of 320 Omega/sq have been integrated in a standard CMOS process with 130 nm gate length. The same low leakage current level is demonstrated for Sb and As extensions. (C) 2003 American Institute of Physics.

引用

页码：826 / 828

页数：3

共 50 条

[31] High performance raised source/drain InAs/In0.53Ga0.47As channel metal-oxide-semiconductor field-effect-transistors with reduced leakage using a vertical spacer
Lee, Sanghoon
Huang, Cheng-Ying
Cohen-Elias, Doron
Law, Jeremy J. M.
Chobpattanna, Varistha
Kraemer, Stephan
Thibeault, Brian J.
Mitchell, William
Stemmer, Susanne
Gossard, Arthur C.
Rodwell, Mark J. W.
APPLIED PHYSICS LETTERS, 2013, 103 (23)
[32] Electrical, structural, and chemical analysis of silicon carbide-based metal-oxide-semiconductor field-effect-transistors
Chang, KC
Porter, LM
Bentley, J
Lu, CY
Cooper, J
JOURNAL OF APPLIED PHYSICS, 2004, 95 (12) : 8252 - 8257
[33] High-k InGaAs metal-oxide-semiconductor field-effect-transistors with various barrier layer materials
Xue, Fei
Zhao, Han
Chen, Yen-Ting
Wang, Yanzhen
Zhou, Fei
Lee, Jack C.
APPLIED PHYSICS LETTERS, 2011, 99 (03)
[34] Investigation of Pd-InGaAs for the formation of self-aligned source/drain contacts in In GaAs metal-oxide-semiconductor field-effect transistors
Kong, Eugene Y. -J.
Ivana
Zhang, Xingui
Zhou, Qian
Pan, Jisheng
Zhang, Zheng
Yeo, Yee-Chia
SOLID-STATE ELECTRONICS, 2013, 85 : 36 - 42
[35] Parasitic subthreshold drain current and low frequency noise in GaN/AlGaN metal-oxide-semiconductor high-electron-mobility field-effect-transistors
Takakura, K.
Putcha, V
Simoen, E.
Alian, A. R.
Peralagu, U.
Waldron, N.
Parvais, B.
Collaert, N.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2020, 36 (02)
[36] Comparison of nanoscale metal-oxide-semiconductor field effect transistors
Li, YM
Lee, JW
Chou, HM
SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2004, 2004, : 307 - 310
[37] Nanowire metal-oxide-semiconductor field effect transistor with doped epitaxial contacts for source and drain
Cohen, G. M.
Rooks, M. J.
Chu, J. O.
Laux, S. E.
Solomon, P. M.
Ott, J. A.
Miller, R. J.
Haensch, W.
APPLIED PHYSICS LETTERS, 2007, 90 (23)
[38] METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTORS POSSESSING STEP FUNCTIONAL IV CURVES CAUSED BY THE PUNCH THROUGH BETWEEN DRAIN AND INVERSION LAYER OF THE GATE
KARASAWA, S
YAMANOUCHI, K
TACHIBANA, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (2A): : 217 - 224
[39] Mitigation of Complementary Metal-Oxide-Semiconductor Variability with Metal Gate Metal-Oxide-Semiconductor Field-Effect Transistors
Yang, Ji-Woon
Park, Chang Seo
Smith, Casey E.
Adhikari, Hemant
Huang, Jeff
Heh, Dawei
Majhi, Prashant
Jammy, Raj
JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (04)
[40] Observation of source-to-drain direct tunneling current in 8 nm gate electrically variable shallow junction metal-oxide-semiconductor field-effect transistors
Kawaura, H
Sakamoto, T
Baba, T
APPLIED PHYSICS LETTERS, 2000, 76 (25) : 3810 - 3812

← 1 2 3 4 5 →