Photoelectric characterisation of electron-irradiated semi-insulating GaAs crystals

被引：0
|
作者：
Jarasiunas, K [1 ]
Sudzius, M [1 ]
Bastiene, L [1 ]
Gudelis, V [1 ]
Jasinskaite, R [1 ]
Delaye, P [1 ]
Roosen, G [1 ]
机构：
[1] CTR SCI ORSAY, URA 14 CNRS, INST OPT THEOR & APPL, F-91403 ORSAY, FRANCE
来源：
COMPOUND SEMICONDUCTORS 1996 | 1997年 / 155期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Nonlinear optical and electrical techniques have been used to study photoelectric properties of electron-irradiated LEC grown GaAs crystals. Faster carrier transport and decreased photorefractive properties have been found and attributed to radiation-induced traps, which diminish the role of dominant deep donor EL2.
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页码：1005 / 1008
页数：4
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