Effects of Plasma Enhanced Chemical Vapor Deposition Radio Frequency on the Properties of SiNx:H Films

被引：0

作者：

Lee, Kyung Dong ^{[1
]}

Ji, Kwang-Sun ^{[2
]}

Bae, Soohyun ^{[1
]}

Kim, Seongtak ^{[1
]}

Kim, Hyunho ^{[1
]}

Kim, Jae Eun ^{[1
]}

Nam, Yoon Chung ^{[1
]}

Choi, Sungjin ^{[3
,4
]}

Jeong, Myeong Sang ^{[1
,3
]}

Kang, Min Gu ^{[3
]}

Song, Hee-Eun ^{[3
]}

Kang, Yoonmook ^{[4
]}

Lee, Hae-Seok ^{[1
]}

Kim, Donghwan ^{[1
]}

机构：

[1] Korea Univ, Dept Mat Sci & Engn, Solar Res Ctr, 145 Anam Ro, Seoul 02841, South Korea

[2] LG Elect Adv Res Inst, Mat & Components R&D Lab, Solar Energy Team, 16 Woomyeon Dong, Seoul 137724, South Korea

[3] KIER, Photovolta Lab, Daejeon 34129, South Korea

[4] Korea Univ, Grad Sch Energy & Environm, KU KIST Green School, 145 Anam Ro, Seoul 02841, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2017年 / 17卷 / 07期

基金：

新加坡国家研究基金会;

关键词：

Silicon Nitride; Plasma-Enhanced Chemical Vapor Deposition Frequency; Passivation; Silicon Solar Cell; Surface Damage; SILICON-NITRIDE; SURFACE PASSIVATION; INTERFACE;

D O I：

10.1166/jnn.2017.14272

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Hydrogenated silicon nitride (SiNx:H) films were fabricated using plasma-enhanced chemical vapor deposition at high (13.56 MHz), low (400 kHz), and dual (13.56 MHz+400 kHz) radio frequencies. The antireflection and passivation qualities of each film were investigated before their application as the front surface layer of crystalline silicon solar cells. The use of a high radio frequency was observed to have a positive effect on the cell performance, which increased by 0.4% in comparison with the minimum value obtained for a 156 mm x 156 mm cell.

引用

页码：4687 / 4693

页数：7

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