Optical band gap of the ordered filled-tetrahedral semiconductor LiMgP

被引：59
|
作者：
Kuriyama, K
Kushida, T
Taguchi, R
机构：
[1] Hosei Univ, Coll Engn, Koganei, Tokyo 184, Japan
[2] Hosei Univ, Res Ctr Ion Beam Technol, Koganei, Tokyo 184, Japan
来源：
SOLID STATE COMMUNICATIONS | 1998年 / 108卷 / 07期
关键词：
crystal growth; crystal structure and symmetry; electronic band structure; light absorption and reflection;
D O I：
10.1016/S0038-1098(98)00384-6
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The optical band gap (E-g) of the ordered filled-tetrahedral semiconductor LiMgP [viewed as a hypothetical zinc-blende (MgP)(-) lattice partially filled with He-like Li+ interstitials] was studied. X-ray diffraction studies of LiMgP show the antifluorite structure (space group F (4) over bar 3m) with the ordered arrangement between Li and Mg rather than the disordered structure reported previously. The band-gap of LiMgP is found to be direct, with a forbidden gap of 2.43 eV at room temperature as LiZnP predicted theoretically by an "interstitial insertion rule". As a result of the replacement of Zn by the light element Mg, the band-gap of LiMgP is larger than that of LiZnP (E-g similar to 2.04 eV). (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：429 / 432
页数：4
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