Wavelength-tunable InGaAs-capped quantum-dot infrared photodetectors for multi-color detection

被引：1
|
作者：
Lin, Wei-Hsun [1 ]
Lin, Shih-Yen [2 ,3 ,4 ]
Tseng, Chi-Che [5 ]
Kung, Shu-Yen [1 ]
Chao, Kuang-Ping [1 ]
Mai, Shu-Cheng [1 ]
Wu, Meng-Chyi [1 ,5 ]
机构：
[1] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan
[2] Acad Sinica, Res Ctr Appl Sci, Taipei 11529, Taiwan
[3] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan
[4] Natl Taiwan Ocean Univ, Inst Optoelect Sci, Keelung 20224, Taiwan
[5] Natl Tsing Hua Univ, Inst Photo Technol, Hsinchu 300, Taiwan
来源：
INFRARED PHYSICS & TECHNOLOGY | 2011年 / 54卷 / 03期
关键词：
Quantum-dot infrared photodetectors; Quantum dots; Multi-color detection; FOCAL-PLANE ARRAY; TEMPERATURE;
D O I：
10.1016/j.infrared.2010.12.017
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
A two-terminal quantum-dot infrared photodetector (QDIP) with stacked 5-period InAs/GaAs and InGaAs-capped InAs/GaAs QD structures is investigated in this paper. The device has exhibited distinct responses at mid-wavelength and long-wavelength infrared regions under positive and negative biases, respectively. Also observed for the device are the equal normal absorption ratios under different voltage biases for the device under either MWIR or LWIR ranges. The device has revealed its potential in the application of voltage-tunable and multi-color detections. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：220 / 223
页数：4
相关论文
共 50 条
  • [1] Wavelength-Tunable InGaAs-Capped Quantum-Dot Infrared Photodetectors
    Lin, Wei-Hsun
    Tseng, Chi-Che
    Chao, Kuang-Ping
    Mai, Shu-Cheng
    Lin, Shih-Yen
    Wu, Meng-Chyi
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2010, 22 (04) : 227 - 229
  • [2] The influence of In composition on InGaAs-capped InAs/GaAs quantum-dot infrared photodetectors
    Lin, Wei-Hsun
    Chao, Kuang-Ping
    Tseng, Chi-Che
    Mai, Shu-Cheng
    Lin, Shih-Yen
    Wu, Meng-Chyi
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (05)
  • [3] InGaAs-Capped InAs-GaAs Quantum-Dot Infrared Photodetectors Operating in the Long-Wavelength Infrared Range
    Lin, Wei-Hsun
    Tseng, Chi-Che
    Chao, Kuang-Ping
    Mai, Shu-Cheng
    Lin, Shih-Yen
    Wu, Meng-Chyi
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2009, 21 (18) : 1332 - 1334
  • [4] Two-color InAs/InGaAs quantum-dot infrared photodetectors for mid- and long-wavelength infrared detection
    Kim, Eui-Tae
    Chen, Zhonghui
    Madhukar, Anupam
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2006, 49 : S837 - S841
  • [5] Multicolor InGaAs quantum-dot infrared photodetectors
    Kim, SM
    Harris, JS
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (11) : 2538 - 2540
  • [6] Broadband InGaAs-capped InAs/GaAs quantum-dot infrared photodetector with Bi-modal dot height distributions
    Lin, Wei-Hsun
    Lin, Shih-Yen
    JOURNAL OF APPLIED PHYSICS, 2012, 112 (03)
  • [7] Voltage-tunable two-color quantum-dot infrared photodetectors
    Lin, Shih-Yen
    Lin, Wei-Hsun
    Tseng, Chi-Che
    Chao, Kuang-Ping
    Mai, Shu-Cheng
    APPLIED PHYSICS LETTERS, 2009, 95 (12)
  • [8] Multi-color tunneling quantum dot infrared photodetectors operating at room temperature
    Ariyawansa, G.
    Perera, A. G. U.
    Su, X. H.
    Chakrabarti, S.
    Bhattacharya, P.
    INFRARED PHYSICS & TECHNOLOGY, 2007, 50 (2-3) : 156 - 161
  • [9] Comparison of Three Design Architectures for Quantum Dot Infrared Photodetectors: InGaAs-Capped Dots, Dots-in-a-Well, and Submonolayer Quantum Dots
    Ghadi, Hemant
    Sengupta, Saumya
    Shetty, Saikalash
    Manohar, Ashutosh
    Balgarkashi, Akshay
    Chakrabarti, Subhananda
    Pendyala, Naresh Babu
    Prajapati, Sachin L.
    Kumar, Ashwani
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2015, 14 (04) : 603 - 607
  • [10] Electrical properties of InAs/InGaAs/GaAs quantum-dot infrared photodetectors
    Kim, Jin Soak
    Kim, Eun Kyu
    Choi, Won Jun
    Song, Jin Dong
    Lee, Jung Il
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (6B): : 5575 - 5577
12345