High-frequency intermodulation analysis of cascode amplifier

被引：0

作者：

Ko, JS ^{[1
]}

Kim, HS ^{[1
]}

Kim, B ^{[1
]}

Park, BH ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, Media Team, Kyunggi Do 440600, South Korea

来源：

PROCEEDINGS OF THE SECOND IEEE ASIA PACIFIC CONFERENCE ON ASICS | 2000年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By the Volterra series analysis [I] using only several device parameters (Cje,beta,tau, and rb), the high-frequency nonlinear behavior of cascode amplifier are analyzed. To verify the validity of this simple analysis, theoretical analysis, simulation, and measurement of intel modulation behavior of cascode amplifier are compared. The results show that simple Volterra series analysis agrees with the simulation and measurement, varying with emitter degeneration inductor and bias current. This simple Volterra series analysis is suitable to estimate the nonlinear characteristics and gives an insight into the conceptual circuit analysis.

引用

页码：167 / 170

页数：4

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