Kinetic lattice Monte Carlo simulations of processes on the silicon (100) surface

被引：2
|
作者：
Akis, R [1 ]
Ferry, DK
Musgrave, CB
机构：
[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA
[2] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA
[3] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 19卷 / 1-2期
关键词：
kinetic lattice Monte Carlo; silicon; surface diffusion;
D O I：
10.1016/S1386-9477(03)00331-X
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We present kinetic lattice Monte Carlo simulations of the Si (100) surface. Taking into account the known anisotropy produced by the surface reconstruction, we examine the diffusion properties of Si ad-dimers and adatoms on the surface. Our results show a transition from quasi-one-dimensional diffusion to two-dimensional motion as the temperature is raised. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：183 / 187
页数：5
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