Epitaxial growth of La0.7Sr0.3CoO3 thin films on SrTiO3 substrates by metal-organic deposition

被引:13
|
作者
Daoudi, K. [1 ]
Tsuchiya, T. [2 ]
Nakajima, T. [2 ]
Fouzri, A. [3 ]
Oueslati, M. [1 ]
机构
[1] Fac Sci Tunis, Unite Spectroscopie Raman, Elmanar Tunis 2092, Tunisia
[2] Natl Inst Adv Ind Sci & Technol, Ibaraki 3058565, Japan
[3] Fac Sci Monastir, Dept Phys, Lab Physicochim Mat, Monastir 5019, Tunisia
关键词
Cobaltite; Thin films; Epitaxial growth; MOD; TEM; EXCIMER-LASER; OXIDE-FILMS; TEMPERATURE-COEFFICIENT; COMPOSITE FILMS; TRANSITION; RESISTANCE; ELECTRON;
D O I
10.1016/j.jallcom.2010.07.035
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
La0.7Sr0.3CoO3 thin films have been epitaxially grown on SrTiO3 (001) single-crystal substrates by metal-organic deposition process. Crystallinity and morphology of the obtained films were examined in detail using X-ray diffraction and transmission electron microscopy. The evolution of the out-of-plane lattice parameter with film thickness is investigated. The critical thickness for strain relaxation is found in the 60-80 nm range. The electrical properties of the obtained films in various conditions have been investigated. By increasing the annealing temperature to 1000 degrees C and the film thickness to 120 nm, the electrical resistivity was decreased by several orders of magnitude. We measured a resistivity of approximately 5 x 10(-4) Omega cm in a wide interval of temperature 77-320 K, making this material a promising candidate for a variety of applications. (c) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:483 / 487
页数:5
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