Spin splitting in HgTe/CdHgTe (013) quantum well heterostructures

被引：24

作者：

Spirin, K. E. ^{[1
]}

Ikonnikov, A. V. ^{[1
]}

Lastovkin, A. A. ^{[1
]}

Gavrilenko, V. I. ^{[1
]}

Dvoretskii, S. A. ^{[2
]}

Mikhailov, N. N. ^{[2
]}

机构：

[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

[2] Russian Acad Sci, Siberian Branch, Inst Semicond Phys, Novosibirsk 630090, Russia

来源：

JETP LETTERS | 2010年 / 92卷 / 01期

基金：

俄罗斯基础研究基金会;

关键词：

ELECTRON-GAS;

D O I：

10.1134/S0021364010130126

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The electron transport and cyclotron resonance in a one-sided selectively doped HgTe/CdHgTe (013) heterostructure with a 15-nm quantum well with an inverted band structure have been investigated. The modulation of the Shubnikov-de Haas oscillations has been observed, and the spin splitting in zero magnetic field has been found to be about 30 meV. A large Delta m (c)/m (c) a parts per thousand integral 0.12 splitting of the cyclotron resonance line has been discovered and shown to be due to both the spin splitting and the strong nonparabolicity of the dispersion relation in the conduction band.

引用

页码：63 / 66

页数：4

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