Giant Quantum Hall Plateau in Graphene Coupled to an InSe van der Waals Crystal

被引：46

作者：

Kudrynskyi, Z. R. ^{[1
]}

Bhuiyan, M. A. ^{[1
]}

Makarovsky, O. ^{[1
]}

Greener, J. D. G. ^{[1
]}

Vdovin, E. E. ^{[1
,2
]}

Kovalyuk, Z. D. ^{[3
]}

Cao, Y. ^{[4
,5
]}

Mishchenko, A. ^{[4
]}

Novoselov, K. S. ^{[4
]}

Beton, P. H. ^{[1
]}

Eaves, L. ^{[1
]}

Patane, A. ^{[1
]}

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[2] RAS, Inst Microelect Technol & High Pur Mat, Chernogolovka 142432, Russia

[3] Natl Acad Sci Ukraine, Inst Problems Mat Sci, Chernivtsi Branch, UA-58001 Chernovtsy, Ukraine

[4] Univ Manchester, Sch Phys & Astron, Oxford Rd, Manchester M13 9PL, Lancs, England

[5] Univ Manchester, Natl Graphene Inst, Manchester M13 9PL, Lancs, England

来源：

PHYSICAL REVIEW LETTERS | 2017年 / 119卷 / 15期

基金：

英国工程与自然科学研究理事会;

关键词：

RESISTANCE STANDARD; EPITAXIAL GRAPHENE;

D O I：

10.1103/PhysRevLett.119.157701

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report on a "giant" quantum Hall effect plateau in a graphene-based field-effect transistor where graphene is capped by a layer of the van der Waals crystal InSe. The giant quantum Hall effect plateau arises from the close alignment of the conduction band edge of InSe with the Dirac point of graphene. This feature enables the magnetic-field- and electric-field-effect-induced transfer of charge carriers between InSe and the degenerate Landau level states of the adjacent graphene layer, which is coupled by a van der Waals heterointerface to the InSe.

引用

页数：5

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