Giant piezoelectric effect in GaN self-assembled quantum dots

被引：27

作者：

Widmann, F ^{[1
]}

Simon, J

Pelekanos, NT

Daudin, B

Feuillet, G

Rouvière, JL

Fishman, G

机构：

[1] CEA Grenoble, Dept Rech Fondamentale Mat Condensee, F-38054 Grenoble, France

[2] CNRS, Spectrometrie Phys Lab, F-38402 St Martin Dheres, France

来源：

MICROELECTRONICS JOURNAL | 1999年 / 30卷 / 4-5期

关键词：

giant piezoelectric effect; quantum dots; emission spectra; GaN;

D O I：

10.1016/S0026-2692(98)00134-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We observe in strained GaN self-assembled quantum dots grown on an AlN layer, a dramatic modification of the optical emission spectra as the dot size varies. In "large" quantum dots with an average height of 4.1 nm, the photoluminescence (PL) peak is centered at 2.95 eV, nearly 0.5 eV below the bulk GaN bandgap. We attribute this enormous redshift to a giant 5.5 MV cm(-1) piezoelectric field present in our dots. Temperature-dependent PL studies reveal the strongly zero-dimensional character of this QD system and are consistent with an intrinsic PL mechanism. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：353 / 356

页数：4

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