Effects of High-Pressure Annealing on the Low-Frequency Noise Characteristics in Ferroelectric FET

被引：35

作者：

Shin, Wonjun ^{[1
,2
]}

Bae, Jong-Ho ^{[3
]}

Kim, Sihyun ^{[1
,2
]}

Lee, Kitae ^{[1
,2
]}

Kwon, Dongseok ^{[1
,2
]}

Park, Byung-Gook ^{[1
,2
]}

Kwon, Daewoong ^{[4
]}

Lee, Jong-Ho ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, Dept Elect & Comp Engn, Seoul 08826, South Korea

[2] Seoul Natl Univ, Interuniv Semicond Res Ctr ISRC, Seoul 08826, South Korea

[3] Kookmin Univ, Sch Elect Engn, Seoul 02707, South Korea

[4] Inha Univ, Dept Elect Engn, Incheon 22212, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2022年 / 43卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

Endurance; ferroelectric FET (FeFET); high-pressure annealing (HPA); low-frequency noise (LFN); wake-up; FILMS; FEFET;

D O I：

10.1109/LED.2021.3127175

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, the low-frequency noise (LFN) characteristics of hafnium-zirconium oxide (HZO) ferroelectric field-effect transistors (FeFETs) with and without high-pressure forming gas annealing (HPA) treatment are investigated. The origin of 1/f noise in the FeFET without HPA is changed from carrier number fluctuation to Hooge's mobility fluctuation after wake-up due to the remote phonon scattering from the polarized HZO. Also, Hooge's parameter is increased by the program/erase (P/E) cycling-induced stress. On the contrary, only the correlated mobility fluctuation is increased after the wake-up in the FeFET with HPA. Furthermore, the LFN of the FeFET with HPA shows robustness to P/E cycling-induced stress after thewake-up, showing superb endurance performance.

引用

页码：13 / 16

页数：4

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