Structure and photoelectric properties of Pb1-xMnxSe epitaxial films

被引：0
|
作者：
Nuriyev, I. R. [1 ]
Gadzhiyev, M. B. [1 ]
Sadigov, R. M. [1 ]
Nazarov, A. M. [1 ]
机构：
[1] Azerbaijan Natl Acad Sci, Inst Phys, AZ 1143,H Javid Av 33, Baku, Azerbaijan
来源：
19TH INTERNATIONAL CONFERENCE ON PHOTOELECTRONICS AND NIGHT VISION DEVICES | 2007年 / 6636卷
关键词：
epitaxial films; photosensitivity; solid solutions; growth; structure; photoelectric;
D O I：
10.1117/12.742554
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The features of growth, structure and photoelectric properties of Pb1-xMnxSe (x=0.02 divided by 0.04) epitaxial films grown by the molecular beams condensation method in vacuum 10(-4) Pa on BaF2 (111) substrate have been investigated. It is shown that received films possess high photosensitivity at 77 K temperature and their spectral characteristics vary by change of x. Shift of the maximum of spectral photosensitivity to shorter wavelengths with growth of x is explained by the increase in width of the forbidden band of Pb1-xMnxSe solid solutions with increase of manganese content.
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页数：4
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