Organic Non-volatile Memory Devices Based on a Ferroelectric Polymer

被引：0
|
作者：
Kalbitz, R. [1 ]
Fruebing, P. [1 ]
Gerhard, R. [1 ]
Taylor, D. M. [2 ]
机构：
[1] Univ Potsdam, Dept Phys & Astron, Karl Liebknecht Str 24-25, D-14476 Potsdam, Germany
[2] Bangor Univ, Sch Elect Engn, Bangor LL57 1UT, Gwynedd, Wales
来源：
2011 14TH INTERNATIONAL SYMPOSIUM ON ELECTRETS (ISE) | 2011年
关键词：
GATE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Organic based FeFETs have been studied using current-voltage measurements. Evidence is presented supporting the idea that, during the application of a sequence of poling cycles, electrons become permanently fixed at the insulator/semiconductor interface probably trapped on the positively charged surfaces of ferroelectrically polarized poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) crystalites at the interface.
引用
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页码：207 / +
页数：2
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